M58WR032EB datasheet(80/81 Pages) STMICROELECTRONICS

80 / 81 page

M58WR032ET, M58WR032EB

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REVISION HISTORY

Table 44. Document Revision History

Date

Version

Revision Details

07-Aug-2002

1.0

First Issue

12-Dec-2002

1.1

Clear Status Register Command, Program/Erase Suspend Command, Set

Configuration Register Command and Factory Program Commands clarified; Tables

5, 7 and 9 modified; Erase Status Bit (SR5) and Wait Configuration Bit (CR8),

clarified; Asynchronous Read Mode, Synchronous Burst Read Mode and Single

Synchronous Read Mode, clarified;

WAIT Active Low bar removed from Figures 10, 11. Note 4 added to Figure 12 and

modified in Figure 13.

Package mechanical information corrected and Daisy Chain added (Figures 19 and

20). Data at address offsets 35h, 38h is reserved.

07-Feb-2003

1.2

85ns Speed Class removed, 80ns Speed Class added. 70ns Speed Class

characterized (certain timings modified).

Block numbering corrected in Table 28., Top Boot Block Addresses, M58WR032ET.

Address lines corrected in AC Waveforms. 2nd Bus Write Operation Address

modified for Enhanced Factory Program, Setup Program, in Table 7., Factory

Program Commands. Clear Status Register Command and Program Command

clarified. Data corrected at (P + 37)h = 70h offset in Table 39., Bank and Erase Block

Region 2 Information.

Datasheet promoted from Target Specification to Product Preview.

20-May-2003

1.3

Automatic Standby mode explained under Asynchronous Read Mode. Minor text

changes in Clear Status Register Command, Quadruple Enhanced Factory Program

Command and Synchronous Burst Read Mode.

Bank Erase Command moved from the Standard to the Factory Program

Commands. Number of Bank Erase cycles limited to 100. Erase replaced by Block

Erase in Tables 11 and 12, Dual Operations Allowed in Other Banks and the Same

Bank, respectively.

IPP2 parameter for VPP = VPPH removed from Table 18., DC Characteristics -

Currents.

VDDQ range split into two in Tables 20 and 21, Asynchronous and Synchronous Read

AC Characteristics: for VDDQ = 2.2V to 3.3V, tAVQV1, tELTV, tEHTZ, tEHQZ, tGLQV, tAVLH,

tELLH and tLLLH in Table 20 and all the timings in Table 21. were modified.

13-Apr-2004

2.0

Document promoted from Product Preview to Full Datasheet status. Small text

changes.

M58WR032EB 数据表(PDF) 80 Page - STMicroelectronics

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