M58WR032EB datasheet(1/81 Pages) STMICROELECTRONICS

部件名	M58WR032EB

功能描述	32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory

PDF	81 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

1 / 81 page

1/81

April 2004

M58WR032ET

M58WR032EB

32 Mbit (2Mb x 16, Multiple Bank, Burst)

1.8V Supply Flash Memory

FEATURES SUMMARY

■

SUPPLY VOLTAGE

–VDD = 1.65V to 2.2V for Program, Erase

and Read

–VDDQ = 1.65V to 3.3V for I/O Buffers

–VPP = 12V for fast Program (optional)

■

SYNCHRONOUS / ASYNCHRONOUS READ

–

Synchronous Burst Read mode: 54MHz

–

Asynchronous/ Synchronous Page Read

mode

–

Random Access: 70, 80, 100ns

■

PROGRAMMING TIME

–

8µs by Word typical for Fast Factory

Program

–

Double/Quadruple Word Program option

–

Enhanced Factory Program options

■

MEMORY BLOCKS

–

Multiple Bank Memory Array: 4 Mbit

Banks

–

Parameter Blocks (Top or Bottom

location)

■

DUAL OPERATIONS

–

Program Erase in one Bank while Read in

others

–

No delay between Read and Write

operations

■

BLOCK LOCKING

–

All blocks locked at Power up

–

Any combination of blocks can be locked

–WP for Block Lock-Down

■

SECURITY

–

128 bit user programmable OTP cells

–

64 bit unique device number

–

One parameter block permanently

lockable

■

COMMON FLASH INTERFACE (CFI)

■

100,000 PROGRAM/ERASE CYCLES per

BLOCK

Figure 1. Package

■

ELECTRONIC SIGNATURE

–

Manufacturer Code: 20h

–

Top Device Code, M58WR032ET: 8814h

–

Bottom Device Code, M58WR032EB:

8815h

VFBGA56 (ZB)

7.7 x 9 mm

FBGA

类似零件编号 - M58WR032EB

制造商	部件名	数据表	功能描述
STMicroelectronics	M58WR032F-ZB	1Mb / 86P	32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory 18-Nov-2004
	M58WR032F-ZBE	1Mb / 86P	32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory 18-Nov-2004
	M58WR032F-ZBF	1Mb / 86P	32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory 18-Nov-2004
	M58WR032F-ZBT	1Mb / 86P	32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory 18-Nov-2004
	M58WR032FB	1Mb / 86P	32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory 18-Nov-2004

More results

类似说明 - M58WR032EB

制造商	部件名	数据表	功能描述
STMicroelectronics	M58CR032C	435Kb / 63P	32 Mbit 2Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory 06-Sep-2002
	M58MR032C	396Kb / 52P	32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory 01-Aug-2002
	M58WR064ET	1Mb / 82P	64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory 19-Feb-2003
	M58WR128ET	1Mb / 87P	128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory 21-May-2003
	7782	435Kb / 63P	32 Mbit (2Mb x 16, Dual Bank, Burst ) 1.8V Supply Flash Memory Sep-2002
	M58WR032FT	1Mb / 86P	32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory 18-Nov-2004
	M36W0R5020T0	184Kb / 26P	32 Mbit (2Mb x16, Multiple Bank, Burst) Flash Memory and 4 Mbit SRAM, 1.8V Supply Multi-Chip Package 17-Dec-2004
	M59DR032EA	386Kb / 43P	32 Mbit (2Mb x 16, Dual Bank, Page ) 1.8V Supply Flash Memory 22-Apr-2003
	M58WR064T	497Kb / 81P	64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory Apr-2002
Numonyx B.V	M58WR016QT	1Mb / 110P	16 Mbit and 32 Mbit (x16, Multiple Bank, Burst) 1.8V supply Flash memories