M58WR032EB datasheet(63/81 Pages) STMICROELECTRONICS

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M58WR032ET, M58WR032EB

Note: 1. The variable P is a pointer which is defined at CFI offset 15h.

2. Bank Regions. There are two Bank Regions, Region 1 contains all the banks that are made up of main blocks only, Region 2 con-

tains the banks that are made up of the parameter and main blocks.

(P+35)h =6Eh

07h

Bank Region 2 Erase Block Type 2 Information

Bits 0-15: n+1 = number of identical-sized erase blocks

Bits 16-31: n×256 = number of bytes in erase block region

(P+36)h =6Fh

00h

(P+37)h =70h

20h

(P+38)h =71h

00h

(P+39)h =72h

64h

Bank Region 2 (Erase Block Type 2)

Minimum block erase cycles × 1000

(P+3A)h =73h

00h

(P+3B)h =74h

01h

Bank Region 2 (Erase Block Type 2): BIts per cell, internal ECC

Bits 0-3: bits per cell in erase region

Bit 4: reserved for “internal ECC used”

BIts 5-7: reserved

(P+3C)h =75h

03h

Bank Region 2 (Erase Block Type 2): Page mode and

synchronous mode capabilities (defined in Table 36.)

Bit 0: Page-mode reads permitted

Bit 1: Synchronous reads permitted

Bit 2: Synchronous writes permitted

Bits 3-7: reserved

(P+3D)h =76h

Feature Space definitions

(P+3E)h =77h

Reserved

M58WR032ET (top)

M58WR032EB (bottom)

Description

Offset

Data

Offset

Data

M58WR032EB 数据表(PDF) 63 Page - STMicroelectronics

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