STM32U535NET3QTR datasheet(196/278 Pages) STMICROELECTRONICS

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Electrical characteristics

STM32U535xx

196/278

DS14217 Rev 1

5.3.10

Flash memory characteristics

IDD(PLL)

PLL power

consumption on

VDD

with LDO

VCO freq = 160 MHz,

1 clock output

Range 1

370

μA

VCO freq = 160 MHz,

3 clock outputs

Range 1

390

VCO freq = 200 MHz,

1 clock output

Range 1

460

Range 2

435

Range 3

410

VCO freq = 336 MHz,

1 clock output

Range 1

710

VCO freq = 544 MHz,

1 clock output

Range 1

1100

IDD(PLL)

PLL power

consumption on

VDD

with SMPS

VCO freq = 160 MHz,

1 clock output

Range 1, IVCORE(6) = 19.4 mA

260

VCO freq = 160 MHz,

3 clock outputs

Range 1, IVCORE(6) = 19.4 mA

270

VCO freq = 200 MHz,

1 clock output

Range 1, IVCORE(6) = 19.4 mA

320

Range 2, IVCORE(6) = 11.7 mA

300

Range 3, IVCORE(6) = 5.74 mA

290

VCO freq = 336 MHz,

1 clock output

Range 1, IVCORE(6) = 19.4 mA

470

VCO freq = 544 MHz,

1 clock output

Range 1, IVCORE(6) = 19.4 mA

730

1. Specified by design and not tested in production, unless otherwise specified.

2. PLL1 output Q and PLL2 output Q can be up to 200 MHz only when selected as OCTOSPI clock.

3. Evaluated by characterization. Not tested in production.

4. Lock time is the duration until PLLxRDY flag (2% of final frequency).

5. Measured on 5000 cycles.

6. SMPS efficiency based on CoreMark RUN current on VCORE at max frequency of each voltage range.

Table 84. PLL characteristics(1) (continued)

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Table 85. Flash memory characteristics(1)

Symbol

Parameter

Conditions

Typ

Max(2)

Unit

tprog

128-bit programming time

Normal mode

118

µs

Burst mode

STM32U535NET3QTR 数据表(PDF) 196 Page - STMicroelectronics

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