STM32U535NET3QTR datasheet(197/278 Pages) STMICROELECTRONICS

197 / 278 page

DS14217 Rev 1

197/278

STM32U535xx

Electrical characteristics

253

tprog_page One 8-Kbyte page programming time

fAHB = 160 MHz, normal mode

60.2

fAHB = 160 MHz, burst mode

24.5

tprog_bank One 1-Mbyte bank programming time

fAHB = 160 MHz, normal mode

7710

fAHB = 160 MHz, burst mode

3140

tERASE One 8-Kbyte page erase time

10 k endurance cycles

1.5

2.4

100 k endurance cycles

1.7

3.4

tME

Mass erase time (one bank)

10 k endurance cycles

Mass erase time (two banks)

154

IDD(3)

Average consumption from VDD

Write mode

2.1

Erase mode

1.3

Maximum current (peak)

Write mode

2.6

Erase mode

3.0

1. Specified by design. Not tested in production.

2. Evaluated by characterization after cycling. Not tested in production.

3. Evaluated by characterization. Not tested in production.

Table 85. Flash memory characteristics(1) (continued)

Symbol

Parameter

Conditions

Typ

Max(2)

Unit

Table 86. Flash memory endurance and data retention

Symbol

Parameter

Conditions

Min(1)

Unit

NEND Endurance

Whole bank

TA = –40 to 125 °C

100

kcycles

tRET

Data retention

TA = 85 °C after 1 kcycle(2)

Years

TA = 105 °C after 1 kcycle(2)

TA = 125 °C after 1 kcycle(2)

TA = 55 °C after 10 kcycles(2)

TA = 85 °C after 10 kcycles(2)

TA = 105 °C after 10 kcycles(2)

TA = 55 °C after 100 kcycles(2)

TA = 85 °C after 100 kcycles(2)

TA = 105 °C after 100 kcycles(2)

1. Evaluated by characterization. Not tested in production.

2. Cycling performed over the whole temperature range.

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