DSP56321RMSLASHD datasheet(37/88 Pages) NXP

37 / 88 page

2-13

AC Electrical Characteristics

114

WR deassertion time4

—2.0

× T

C − 3.0

≤ WS ≤ 7]

3.0

× T

C − 3.0

[WS

≥ 8]

6.1

10.6

—

5.3

9.5

—

115

Address valid to RD assertion

—

0.5

× T

C − 2.0

0.3

—

0.1

—

116

RD assertion pulse width

—

(WS + 0.25)

× T

C − 3.0

[WS

≥ 3]

11.79

—

10.55

—

117

RD deassertion to address not valid

—

1.25

× T

C − 4.0

≤ WS ≤ 7]

2.25

× T

C − 4.0

[WS

≥ 8]

1.69

6.24

—

1.21

5.38

—

118

TA setup before RD or WR deassertion5

—

0.25

× T

C + 2.0

3.14

—

3.04

—

119

TA hold after RD or WR deassertion

—

Notes:

WS is the number of wait states specified in the BCR. The value is given for the minimum for a given category. (For

example, for a category of [3

≤ WS ≤ 7] timing is specified for 3 wait states.) Three wait states is the minimum value

otherwise.

Timings 100 and 107 are guaranteed by design, not tested.

All timings are measured from 0.5

× V

CCQH to 0.5 × VCCQH.

The WS number applies to the access in which the deassertion of WR occurs and assumes the next access uses a

minimal number of wait states.

Timing 118 is relative to the deassertion edge of RD or WR even if TA remains asserted.

Figure 2-10. SRAM Read Access

Table 2-8. SRAM Timing (Continued)

No.

Characteristics

Symbol

Expression1

220 MHz

240 MHz

Unit

Min

Max

Min

Max

A[0–17]

D[0–23]

AA[0–3]

105

106

113

104

116

117

100

118

Data

119

Note: Address lines A[0–17] hold their state after a

read or write operation. AA[0–3] do not hold their

state after a read or write operation.

Freescale Semiconductor, Inc.

For More Information On This Product,

Go to: www.freescale.com

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