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MPC8560CPXAPDB 数据表(PDF) 22 Page - Freescale Semiconductor, Inc |
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MPC8560CPXAPDB 数据表(HTML) 22 Page - Freescale Semiconductor, Inc |
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22 / 108 page ![]() MPC8560 Integrated Processor Hardware Specifications, Rev. 3.1 22 Freescale Semiconductor DDR SDRAM MCK[n] duty cycle tMCKH/tMCK 45 55 % 8 ADDR/CMD output valid tDDKHOV — 3 ns 4, 9 ADDR/CMD output invalid tDDKHOX 1 — ns 4, 9 Write CMD to first MDQS capture edge tDDSHMH tMCK + 1.5 tMCK + 4.0 ns 5 MDQ/MECC/MDM output setup with respect to MDQS 333 MHz 266 MHz 200 MHz tDDKHDS, tDDKLDS 900 1100 1200 — ps 6, 9 MDQ/MECC/MDM output hold with respect to MDQS 333 MHz 266 MHz 200 MHz tDDKHDX, tDDKLDX 900 1100 1200 — ps 6, 9 MDQS preamble start tDDSHMP 0.75 × tMCK + 1.5 0.75 × tMCK + 4.0 ns 7, 8 MDQS epilogue end tDDSHME 1.5 4.0 ns 7, 8 Notes: 1.The symbols used for timing specifications follow the pattern of t(first two letters of functional block)(signal)(state) (reference)(state) for inputs and t(first two letters of functional block)(reference)(state)(signal)(state) for outputs. Output hold time can be read as DDR timing (DD) from the rising or falling edge of the reference clock (KH or KL) until the output went invalid (OX or DX). For example, tDDKHOV symbolizes DDR timing (DD) for the time tMCK memory clock reference (K) goes from the high (H) state until outputs (O) are valid (V) or output valid time. Also, tDDKLDX symbolizes DDR timing (DD) for the time tMCK memory clock reference (K) goes low (L) until data outputs (D) are invalid (X) or data output hold time. 2.All MCK/MCK referenced measurements are made from the crossing of the two signals ±0.1 V. 3.Maximum possible clock skew between a clock MCK[n] and its relative inverse clock MCK[n], or between a clock MCK[n] and a relative clock MCK[m] or MSYNC_OUT. Skew measured between complementary signals at GVDD/2. 4.ADDR/CMD includes all DDR SDRAM output signals except MCK/MCK and MDQ/MECC/MDM/MDQS. 5.Note that tDDSHMH follows the symbol conventions described in note 1. For example, tDDSHMH describes the DDR timing (DD) from the rising edge of the MSYNC_IN clock (SH) until the MDQS signal is valid (MH). tDDSHMH can be modified through control of the DQSS override bits in the TIMING_CFG_2 register. These controls allow the relationship between the synchronous clock control timing and the source-synchronous DQS domain to be modified by the user. For best turnaround times, these may need to be set to delay tDDSHMH an additional 0.25tMCK. This will also affect tDDSHMP and tDDSHME accordingly. See the MPC8560 PowerQUICC III Integrated Communications Processor Preliminary Reference Manual for a description and understanding of the timing modifications enabled by use of these bits. 6.Determined by maximum possible skew between a data strobe (MDQS) and any corresponding bit of data (MDQ), ECC (MECC), or data mask (MDM). The data strobe should be centered inside of the data eye at the pins of the MPC8560. 7.All outputs are referenced to the rising edge of MSYNC_IN (S) at the pins of the MPC8560. Note that tDDSHMP follows the symbol conventions described in note 1. For example, tDDSHMP describes the DDR timing (DD) from the rising edge of the MSYNC_IN clock (SH) for the duration of the MDQS signal precharge period (MP). 8.Guaranteed by design. 9.Guaranteed by characterization. Table 15. DDR SDRAM Output AC Timing Specifications - DLL Mode (continued) At recommended operating conditions with GVDD of 2.5 V ± 5%. Parameter Symbol 1 Min Max Unit Notes |
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