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S12SCIV2/D 数据表(PDF) 105 Page - Freescale Semiconductor, Inc |
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S12SCIV2/D 数据表(HTML) 105 Page - Freescale Semiconductor, Inc |
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105 / 130 page  MC9S12H256 Device User Guide — V01.18 The failure rates for data retention and program/erase cycling are specified at the operating conditions noted. The program/erase cycle count on the sector is incremented every time a sector or mass erase event is executed. Table A-12 NVM Reliability Characteristics NOTE: Flash cycling performance is 10 cycles at -40˚C to +125˚C. Data retention is specified for 15 years. NOTE: EEPROM cycling performance is 10K cycles at -40˚C to 125˚C. Data retention is specified for 5 years on words after cycling 10K times. However if only 10 cycles are executed on a word the data retention is specified for 15 years. Conditions are shown in Table A-4 unless otherwise noted Num C Rating Cycles Data Retention Lifetime Unit 1 C Flash/EEPROM (-40˚C to +125˚C) 10 15 Years 2 C EEPROM (-40˚C to +125˚C) 10,000 5 Years Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.com |
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