M58LR128KB datasheet(109/110 Pages) NUMONYX

部件名	M58LR128KB

功能描述	128 or 256 Mbit (횞16, multiple bank, multilevel interface, burst) 1.8 V supply Flash memories

PDF	110 Pages

Scroll/Zoom	100%

制造商	NUMONYX [Numonyx B.V]

网页	http://www.numonyx.com

标志

109 / 110 page

M58LR128KT, M58LR128KB, M58LR256KT, M58LR256KB

Revision history

109/111

Revision history

Table 56.

Document revision history

Date

Revision

Changes

23-Mar-2007

Initial release.

06-Dec-2007

In Table 18: Program/erase times and endurance cycles, changed

the suspend latency program and erase values to 5, 10 and 5, 20

respectively, to 20 and 25 for both.

In Table 19: Absolute maximum ratings, changed the VIO maximum

value from 3.8 to VDDQ + 0.6 V.

In Table 22: DC characteristics - currents:

– Added the 256 Mbit values for IDD2, IDD3, and IDD7.

–For IDD5, changed the supply current (both program and erase)

VPPH values to 10 and 30, and changed the VDD and values to 20

and 35, respectively.

–For IDD6, changed the “asynchronous read in another bank” values

to 33 and 50, respectively; changed the “synchronous read in

another bank” values to 50 and 67, respectively.

In Table 28: Reset and power-up AC characteristics, changed the

tVDHPH value from 250 to 300.

27-Mar-2008

Applied Numonyx branding.

M58LR128KB 数据表(PDF) 109 Page - Numonyx B.V