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STR910FAM32 数据表(PDF) 69 Page - STMicroelectronics

部件名 STR910FAM32
功能描述  ARM966E-S??16/32-Bit Flash MCU with Ethernet, USB, CAN, AC motor control, 4 timers, ADC, RTC, DMA
PDF  101 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STR910FAM32 数据表(HTML) 69 Page - STMicroelectronics

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STR91xFAx3x, STR91xFAx4x
Electrical characteristics
69/101
7.8.2
Flash memory characteristics
VDDQ = 2.7 - 3.6V, VDD = 1.65 - 2V, TA = -40 / 85 °C unless otherwise specified.
Note:
Flash read access for sequential addresses is 0 wait states at 96 MHz.
Flash read access for non-sequential accesses requires 2 wait states when FMI clock is
above 66 MHz. See STR91xF Flash Programming Manual for more information.
Table 24.
Flash memory program/erase characteristics (Flash size
≤ 512 KB)
Parameter
Test Conditions
Value
Unit
Typ(1)
Typ after
100K W/E
cycles(1)
Max
Bank erase
Primary Bank (512 Kbytes)
8
9
11.5
s
Primary Bank (256 Kbytes)
4
4.5
6
s
Secondary Bank (32 Kbytes)
700
750
950
ms
Sector erase
Of Primary Bank (64 Kbytes)
1300
1400
1800
ms
Of Secondary Bank (8 Kbytes)
300
320
450
ms
Bank program
Primary Bank (512 Kbytes)
3700
4700
5100
ms
Primary Bank (256 Kbytes)
1900
2000
2550
ms
Secondary Bank (32 Kbytes)
250
260
320
ms
Sector program
Of Primary Bank (64 Kbytes)
500
520
640
ms
Of Secondary Bank (8 Kbytes)
60
62
80
ms
Word program
Half word (16 bits)
8
9
11
µs
1.
VDD = 1.8V, VDDQ = 3.3V, TA = 25°C.
Table 25.
Flash memory program/erase characteristics (Flash size = 1 MB / 2 MB)
Parameter
Test Conditions
Value
Unit
Typ(1)
Typ after
100K W/E
cycles(1)
Max
Bank erase
Primary Bank (2 Mbytes)
32
36
46
s
Primary Bank (1 Mbytes)
16
18
23
s
Secondary Bank (128 Kbytes)
2.5
3
4
s
Sector erase
Of Primary Bank (64 Kbytes)
1300
1400
1800
ms
Of Secondary Bank (16 Kbytes)
500
600
850
ms
Bank program
Primary Bank (2 Mbytes)
15
20
22
s
Primary Bank (1 Mbytes)
7.5
10
11
s
Secondary Bank (128 Kbytes)
1060
1140
1380
ms



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