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STR910FAM32 数据表(PDF) 70 Page - STMicroelectronics |
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STR910FAM32 数据表(HTML) 70 Page - STMicroelectronics |
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70 / 101 page ![]() Electrical characteristics STR91xFAx3x, STR91xFAx4x 70/101 Sector program Of Primary Bank (64 Kbytes) 500 520 640 ms Of Secondary Bank (16 Kbytes) 120 130 160 ms Word program Half word (16 bits) 8 9 11 µs 1. VDD = 1.8V, VDDQ = 3.3V, TA = 25°C. Table 25. Flash memory program/erase characteristics (Flash size = 1 MB / 2 MB) Parameter Test Conditions Value Unit Typ(1) Typ after 100K W/E cycles(1) Max Table 26. Flash memory endurance Parameter Test Conditions Value Unit Min Typ Max Program/erase cycles Per word 100K cycles Data retention 20 years |
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