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ST7263 数据表(PDF) 13 Page - STMicroelectronics |
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ST7263 数据表(HTML) 13 Page - STMicroelectronics |
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13 / 109 page  ST7263 13/109 1.5 EPROM/OTP PROGRAM MEMORY The program memory of the ST72T63 may be pro- grammed using the EPROM programming boards available from STMicroelectronics (see Table 26). 1.5.1 EPROM ERASURE ST72Exxx EPROM devices are erased by expo- sure to high intensity UV light admitted through the transparent window. This exposure discharges the floating gate to its initial state through induced photo current. It is recommended that the ST72Exxx devices be kept out of direct sunlight, since the UV content of sunlight can be sufficient to cause functional fail- ure. Extended exposure to room level fluorescent lighting may also cause erasure. An opaque coating (paint, tape, label, etc...) should be placed over the package window if the product is to be operated under these lighting con- ditions. Covering the window also reduces IDD in power-saving modes due to photo-diode leakage currents. An Ultraviolet source of wave length 2537 Å yield- ing a total integrated dosage of 15 Watt-sec/cm2 is required to erase the ST72Exxx. The device will be erased in 15 to 30 minutes if such a UV lamp with a 12mW/cm2 power rating is placed 1 inch from the device window without any interposed fil- ters. |
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