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STPCC0366BTC3 数据表(PDF) 47 Page - STMicroelectronics |
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STPCC0366BTC3 数据表(HTML) 47 Page - STMicroelectronics |
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47 / 51 page ![]() BOARD LAYOUT 47/51 Release B This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 6.3.7 Data Read (MD[63:0]) The data read simulation circuit is shown below.. 6.3.8 Data Mask (DQM[7:0]) The data mask load is quite similar to that of the data signals. 6.3.9 Summary For unbuffered DIMMs the address/control signals will be the most critical for timing unless the mem- ory controller can be designed to set up these sig- nals one cycle in advance. The simulations show that for these signals the best way to drive them is to use a parallel termination. For applications where speed is not so critical series termination can be used as this will save power. Using a low impedance such as 50W for these critical traces is recommended as it both reduces the delay and the overshoot. The other memory interface signals will typically be not as critical as the address/control signals for unbuffered DIMMs. When using registered DIMMs the other signals will probably be just as critical as the address/control signals so to gain maximum benefit from using registered DIMMs the timings should also be considered in that situation. Using lower impedance traces is also beneficial for the other signals but if their timing is not as critical as the address/control signals they could use the de- fault value. Using a lower impedance implies us- ing wider traces which may have an impact on the routing of the board. Figure 6-17. Data read equivalent circuit 125mm (0.9ns) 10mm 10W SDRAM DQ DIMM1 |
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