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数据搜索系统，热门电子元器件搜索 |
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数据搜索系统，热门电子元器件搜索 |
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H8/3028F 数据表(PDF) 615 Page - Renesas Technology Corp |
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H8/3028F 数据表(HTML) 615 Page - Renesas Technology Corp |
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615 / 923 page  Rev. 2.00, 09/03, page 585 of 890 Boot mode On-board programming mode User program mode User mode with on-chip ROM enabled Reset state PROM mode RES = 0 FWE = 0 RES = 0 RES = 0 RES = 0 *1 *1 *3 *2 *4 *5 *4 Notes: Only make a transition between user mode and user program mode when the CPU is not accessing the flash memory. 1. RAM emulation possible 2. The H8/3028F-ZTAT is placed in PROM mode by means of a dedicated PROM writer. 3. MD2, MD1, MD0 = (1, 0, 1) (1, 1, 0) (1, 1, 1) FWE = 0 4. MD2, MD1, MD0 = (1, 0, 1) (1, 1, 1) FWE = 1 5. MD2, MD1, MD0 (0, 0, 1) (0, 1, 1) FWE = 1 Figure 18.2 Flash Memory Related State Transitions State transitions between the normal and user modes and on-board programming mode are performed by changing the FWE pin level from high to low or from low to high. To prevent misoperation (erroneous programming or erasing) in these cases, the bits in the flash memory control register (FLMCR1) should be cleared to 0 before making such a transition. After the bits are cleared, a wait time is necessary. Normal operation is not guaranteed if this wait time is insufficient. |
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