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数据搜索系统，热门电子元器件搜索 |
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数据搜索系统，热门电子元器件搜索 |
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H8/3028F 数据表(PDF) 200 Page - Renesas Technology Corp |
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H8/3028F 数据表(HTML) 200 Page - Renesas Technology Corp |
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200 / 923 page  Rev. 2.00, 09/03, page 170 of 890 • Figure 6.33 shows typical interconnections when using two 4-Mbit DRAMs, and the corresponding address map. The DRAMs used in this example are of the 9-bit row address × 10-bit column address type. In this example, upper address decoding allows multiple DRAMs to be connected to a single area. The RFSH pin is used in this case, since both DRAMs must be refreshed simultaneously. However, note that RAS down mode cannot be used in this interconnection example. CS 2 (RAS2) RD (WE) A9-A1 D15-D0 A8-A0 D15-D0 PB4 (UCAS) PB5 (LCAS) RAS WE UCAS LCAS A8-A0 D15-D0 RAS WE UCAS LCAS No.1 No.2 OE OE DRAM (No.1) H'400000 H'47FFFE H'480000 H'4FFFFE H'500000 H'5FFFFE DRAM (No.2) Not used (a) Interconnections (example) CS 2 (RAS2) PB4 (UCAS) PB5 (LCAS) 15 0 7 8 Area 2 16-Mbyte mode (b) Address map H8/3028 Group chip 2- CAS 4-Mbit DRAM 9-bit row address × 9-bit column address × 16-bit organization RFSH A19 Figure 6.33 Interconnections and Address Map for 2-CAS 4-Mbit DRAMs with ×××× 16-Bit Organization |
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