STM8L151C4 datasheet(72/101 Pages) STMICROELECTRONICS

72 / 101 page

Electrical parameters

STM8L151xx, STM8L152xx

72/101

Doc ID 15962 Rev 2

Internal clock sources

Subject to general operating conditions for VDD, and TA.

High speed internal RC oscillator (HSI)

Low speed internal RC oscillator (LSI)

Table 28.

HSI oscillator characteristics (1)

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

fHSI

Frequency

VDD = 3.0 V

MHz

ACCHSI

Accuracy of HSI

oscillator (factory

calibrated)

VDD = 3.0 V, TA = 25 °C

-1 (2)

1 (2)

VDD = 3.0 V, 0 °C ≤TA ≤ 55 °C

-1.5 (2)

1.5 (2)

VDD = 3.0 V, -10 °C ≤TA ≤ 70 °C

-2 (2)

2 (2)

VDD = 3.0 V, -10 °C ≤TA ≤ 85 °C

-2.5 (2)

2(2)

VDD = 3.0 V, -10 °C ≤TA ≤ 125 °C

-4.5 (2)

2 (2)

1.65 V

≤VDD ≤ 3.6 V,

-40 °C

≤TA ≤ 125 °C

-4.5

TRIM

HSI user trim

resolution

1.65 V

≤VDD ≤ 3.6 V,

-40 °C

≤TA ≤ 125 °C

±0.4 (2)

±0.5

tsu(HSI)

HSI oscillator setup

time (wakeup time)

3.7

7.4 (2)

µs

IDD(HSI)

HSI oscillator power

consumption

100

140 (2)

µA

VDD = 3.0 V, TA = -40 to 125 °C unless otherwise specified.

Data based on characterization results, not tested in production.

Table 29.

LSI oscillator characteristics (1)

VDD = 1.8 V to 3.0 V, TA = -40 to 125 °C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

fLSI

Frequency

kHz

tsu(LSI)

LSI oscillator wakeup time

TBD

TBD(2)

Data based on characterization results, not tested in production.

µs

IDD(LSI)

LSI oscillator frequency

drift(3)

This is a deviation for an individual part, once the initial frequency has been measured.

0 °C

≤TA ≤ 85 °C

-10

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