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STM8L151C4 数据表(PDF) 90 Page - STMicroelectronics |
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STM8L151C4 数据表(HTML) 90 Page - STMicroelectronics |
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90 / 101 page ![]() Electrical parameters STM8L151xx, STM8L152xx 90/101 Doc ID 15962 Rev 2 Electromagnetic interference (EMI) Based on a simple application running on the product (toggling 2 LEDs through the I/O ports), the product is monitored in terms of emission. This emission test is in line with the norm IEC61967-2 which specifies the board and the loading of each pin. Absolute maximum ratings (electrical sensitivity) Based on two different tests (ESD and LU) using specific measurement methods, the product is stressed in order to determine its performance in terms of electrical sensitivity. For more details, refer to the application note AN1181. Electrostatic discharge (ESD) Electrostatic discharges (a positive then a negative pulse separated by 1 second) are applied to the pins of each sample according to each pin combination. The sample size depends on the number of supply pins in the device (3 parts*(n+1) supply pin). Two models can be simulated: human body model and charge device model. This test conforms to the JESD22-A114A/A115A standard. Table 48. EMS data Symbol Parameter Conditions Level/ Class VFESD Voltage limits to be applied on any I/O pin to induce a functional disturbance VDD = 3.3 V, TA = +25 °C, fCPU= 16 MHz, conforms to IEC 61000 TBD VEFTB Fast transient voltage burst limits to be applied through 100 pF on VDD and VSS pins to induce a functional disturbance VDD = 3.3 V, TA = +25 °C, fCPU = 16 MHz, conforms to IEC 61000 TBD Table 49. EMI data (1) 1. Not tested in production. Symbol Parameter Conditions Monitored frequency band Max vs. Unit 16 MHz SEMI Peak level VDD = 3.6 V, TA = +25 °C, LQFP32 conforming to IEC61967-2 0.1 MHz to 30 MHz TBD dB μV 30 MHz to 130 MHz TBD 130 MHz to 1 GHz TBD SAE EMI Level 1 - |
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