STM8L151C4 datasheet(73/101 Pages) STMICROELECTRONICS

73 / 101 page

STM8L151xx, STM8L152xx

Electrical parameters

Doc ID 15962 Rev 2

73/101

8.3.5

Memory characteristics

TA = -40 to 125 °C unless otherwise specified.

Table 30.

RAM and hardware registers

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VRM

Data retention mode (1)

Minimum supply voltage without losing data stored in RAM (in Halt mode or under Reset) or in hardware

registers (only in Halt mode). Guaranteed by characterization, not tested in production.

Flash memory

Halt mode (or Reset)

1.4

Table 31.

Flash program memory

Symbol

Parameter

Conditions

Min

Typ

Max

(1)

Unit

VDD

Operating voltage

(all modes, read/write/erase)

fSYSCLK = 16 MHz

1.65

3.6

tprog

Programming time for 1 or 128 bytes (block)

erase/write cycles (on programmed byte)

TBD

Programming time for 1 to 128 bytes (block)

write cycles (on erased byte)

TBD

Iprog

Programming/ erasing consumption

TA=+25 °C, VDD = 3.0 V

TBD

TA=+25 °C, VDD = 1.8 V

TBD

tRET

Data retention (program memory) after 10000

erase/write cycles at TA=+85 °C

TRET=+55 °C

TBD(1)

years

Data retention (data memory) after 10000

erase/write cycles at TA=+85 °C

TRET=+55 °C

TBD(1)

Data retention (data memory) after 10000

erase/write cycles at TA=+85 °C

TRET=+85 °C

TBD(1)

NRW

Erase/write cycles (program memory)

See notes (1)(2)

TBD(1)

kcycles

Erase/write cycles (data memory)

See notes (1)(3)

TBD(1)

(4)

Data based on characterization results, not tested in production.

Retention guaranteed after cycling is 10 years @ 55 °C.

Retention guaranteed after cycling is 1 year @ 55 °C.

Data based on characterization performed on the whole data memory.

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