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STM8L151C4 数据表(PDF) 91 Page - STMicroelectronics

部件名 STM8L151C4
功能描述  8-bit ultralow power MCU, up to 32 KB Flash, 1 KB Data EEPROM RTC, LCD, timers, USART, I2C, SPI, ADC, DAC, comparators
PDF  101 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STM8L151C4 数据表(HTML) 91 Page - STMicroelectronics

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STM8L151xx, STM8L152xx
Electrical parameters
Doc ID 15962 Rev 2
91/101
Static latch-up
LU: 3 complementary static tests are required on 10 parts to assess the latch-up
performance. A supply overvoltage (applied to each power supply pin) and a current
injection (applied to each input, output and configurable I/O pin) are performed on each
sample. This test conforms to the EIA/JESD 78 IC latch-up standard. For more details,
refer to the application note AN1181.
8.4
Thermal characteristics
The maximum chip junction temperature (TJmax) must never exceed the values given in
Table 15: General operating conditions on page 58.
The maximum chip-junction temperature, TJmax, in degree Celsius, may be calculated using
the following equation:
TJmax = TAmax + (PDmax x ΘJA)
Where:
TAmax is the maximum ambient temperature in ° C
ΘJA is the package junction-to-ambient thermal resistance in ° C/W
PDmax is the sum of PINTmax and PI/Omax (PDmax = PINTmax + PI/Omax)
PINTmax is the product of IDD and VDD, expressed in Watts. This is the maximum chip
internal power.
PI/Omax represents the maximum power dissipation on output pins
Where:
PI/Omax = Σ (VOL*IOL) + Σ((VDD-VOH)*IOH),
taking into account the actual VOL/IOL and VOH/IOH of the I/Os at low and high level in
the application.
Table 50.
ESD absolute maximum ratings
Symbol
Ratings
Conditions
Maximum
value (1)
1.
Data based on characterization results, not tested in production.
Unit
VESD(HBM)
Electrostatic discharge voltage
(human body model)
TA = +25 °C
2000
V
VESD(CDM)
Electrostatic discharge voltage
(charge device model)
1000
Table 51.
Electrical sensitivities
Symbol
Parameter
Class
LU
Static latch-up class
II



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