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数据搜索系统，热门电子元器件搜索 |
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数据搜索系统，热门电子元器件搜索 |
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ATtiny5 数据表(PDF) 112 Page - ATMEL Corporation |
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ATtiny5 数据表(HTML) 112 Page - ATMEL Corporation |
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112 / 168 page  112 8127C–AVR–10/09 ATtiny4/5/9/10 Figure 15-1. Addressing the Flash Memory 15.4.2 Reading the Flash The Flash can be read from the data memory mapped locations one byte at a time. For read operations, the least significant bit (bit 0) is used to select the low or high byte in the word address. If this bit is zero, the low byte is read, and if it is one, the high byte is read. 15.4.3 Programming the Flash The Flash can be written word-by-word. Before writing a Flash word, the Flash target location must be erased. Writing to an un-erased Flash word will corrupt its content. The Flash is word-accessed for writing, and the data space uses byte-addressing to access Flash that has been mapped to data memory. It is therefore important to write the word in the correct order to the Flash, namely low bytes before high bytes. First, the low byte is written to the temporary buffer. Then, writing the high byte latches both the high byte and the low byte into the Flash word buffer, starting the write operation to Flash. The Flash erase operations can only performed for the entire Flash sections. The Flash programming sequence is as follows: 1. Perform a Flash section erase or perform a Chip erase 2. Write the Flash section word by word 15.4.3.1 Chip Erase The Chip Erase command will erase the entire code section of the Flash memory and the NVM Lock Bits. For security reasons, the NVM Lock Bits are not reset before the code section has been completely erased. Configuration, Signature and Calibration sections are not changed. 00 PAGE 01 02 SECTIONEND WORD 00 01 PAGEEND FLASH SECTION FLASH PAGE 0/1 WADDR PADDR 1 WADDRMSB PADDRMSB 16 ADDRESS POINTER ... ... ... ... ... ... PAGE ADDRESS WITHIN A FLASH SECTION WORD ADDRESS WITHIN A FLASH PAGE LOW/HIGH BYTE SELECT WADDRMSB+1 |
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