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PCF8811U/2DA/1 数据表(PDF) 59 Page - NXP Semiconductors |
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PCF8811U/2DA/1 数据表(HTML) 59 Page - NXP Semiconductors |
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59 / 81 page ![]() PCF8811_4 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 04 — 27 June 2008 59 of 81 NXP Semiconductors PCF8811 80 x 128 pixels matrix LCD driver [2] Valid for values of temperature, VPR and TC used at calibration. [3] During power-down all static currents are switched off. [4] Conditions are: VDD1 = 1.8 V, VDD2 = 2.7 V, VLCD = 8.05 V, voltage multiplier 4 × VDD2, inputs at VDD1 or VSS, interface inactive, internal VLCD generation, VLCD output is loaded by 10 µA and Tamb = 25 °C. [5] Normal mode. [6] TC7 can only be used when VDD2 = VDD3 = 2.4 V or higher. 16. Dynamic characteristics [1] All specified timings are based on 20 % and 80 % of VDD. [2] RES can be LOW before VDD goes HIGH. 16.1 Parallel interface timing characteristics Table 31. Dynamic characteristics[1] VDD1 = 1.7 V to 3.3 V; VSS = 0 V; VLCD ≤ 9 V; Tamb = −40 °C to +85 °C; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit fext external frequency external clock - 200 - kHz fframe frame frequency Tamb = 25 °C; VDD1 = 2.4 V 54 60 66 Hz 43 58 73 Hz tVHRL VDD to RES LOW see Figure 47 [2] 0- 1 µs tRW RES LOW pulse width see Figure 47 500 - - ns Table 32. Parallel interface (6800 series) timing characteristics VDD1 = 1.8 V to 3.3 V; VSS = 0 V; VLCD ≤ 9 V; Tamb = −40 °C to +85 °C; unless otherwise specified; see Figure 39 and Figure 40. Symbol Parameter Min Max Unit tSU;DC data/command set-up time 40 - ns tHD;DC data/command hold time 20 - ns Tcyc(DS) data strobe cycle time 1000 - ns tDS(L) data strobe LOW time 320 - ns tDS(H) data strobe HIGH time 300 - ns tSU;RW read/write set-up time 280 - ns tHD;RW read/write hold time 20 - ns tSU;CE chip enable set-up time 280 - ns tHD;CE chip enable hold time 0 - ns tSU;DAT data set-up time 20 - ns tHD;DAT data hold time 40 - ns tDAT;ACC data output access time - 280 ns tDAT;OH data output disable time - 20 ns |
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