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MSP430F2012IN 数据表(PDF) 47 Page - Texas Instruments |
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MSP430F2012IN 数据表(HTML) 47 Page - Texas Instruments |
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47 / 91 page  MSP430F20x3 MSP430F20x2 MSP430F20x1 www.ti.com SLAS491G – AUGUST 2005 – REVISED APRIL 2011 SD16_A, Temperature Sensor (1) (MSP430F20x3) over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted) PARAMETER TEST CONDITIONS VCC MIN TYP MAX UNIT TCSensor Sensor temperature coefficient 1.18 1.32 1.46 mV/ °C VOffset,Sensor Sensor offset voltage -100 100 mV Temperature sensor voltage at 435 475 515 TA = 85°C Temperature sensor voltage at VSensor Sensor output voltage(2) 3 V 355 395 435 mV TA = 25°C Temperature sensor voltage at 320 360 400 TA = 0°C (1) Values are not based on calculations using TCSensor or VOffset,sensor but on measurements. (2) The following formula can be used to calculate the temperature sensor output voltage: VSensor,typ = TCSensor ( 273 + T [°C] ) + VOffset,sensor [mV] or VSensor,typ = TCSensor T [°C] + VSensor(TA = 0°C) [mV] Flash Memory over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted) TEST PARAMETER VCC MIN TYP MAX UNIT CONDITIONS VCC(PGM/ERASE) Program and erase supply voltage 2.2 3.6 V fFTG Flash timing generator frequency 257 476 kHz IPGM Supply current from VCC during program 2.2 V/3.6 V 1 5 mA IERASE Supply current from VCC during erase 2.2 V/3.6 V 1 7 mA tCPT Cumulative program time(1) 2.2 V/3.6 V 10 ms tCMErase Cumulative mass erase time 2.2 V/3.6 V 20 ms Program/erase endurance 104 105 cycles tRetention Data retention duration TJ = 25°C 100 years tWord Word or byte program time (2) 30 tFTG tBlock, 0 Block program time for first byte or word (2) 25 tFTG Block program time for each additional byte or tBlock, 1-63 (2) 18 tFTG word tBlock, End Block program end-sequence wait time (2) 6 tFTG tMass Erase Mass erase time (2) 10593 tFTG tSeg Erase Segment erase time (2) 4819 tFTG (1) The cumulative program time must not be exceeded when writing to a 64-byte flash block. This parameter applies to all programming methods: individual word/byte write and block write modes. (2) These values are hardwired into the Flash Controller 's state machine (tFTG = 1/fFTG). RAM over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted) PARAMETER TEST CONDITIONS MIN MAX UNIT V(RAMh) RAM retention supply voltage (1) CPU halted 1.6 V (1) This parameter defines the minimum supply voltage VCC when the data in RAM remains unchanged. No program execution should happen during this supply voltage condition. Copyright © 2005–2011, Texas Instruments Incorporated 47 |
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