| 数据搜索系统,热门电子元器件搜索 |
|
AFS090 数据表(PDF) 164 Page - Microsemi Corporation |
|
|
|||||||||||||||||||||||||||||
AFS090 数据表(HTML) 164 Page - Microsemi Corporation |
|
164 / 334 page ![]() Device Architecture 2- 14 8 R e v isio n 2 Solution 3 The board-level design must ensure that the reflected waveform at the pad does not exceed limits provided in Table 3-4 on page 3-4. This is a long-term reliability requirement. This scheme will also work for a 3.3 V PCI/PCIX configuration, but the internal diode should not be used for clamping, and the voltage must be limited by the bus switch, as shown in Figure 2-103. Relying on the diode clamping would create an excessive pad DC voltage of 3.3 V + 0.7 V = 4 V. Solution 4 Figure 2-103 • Solution 3 Figure 2-104 • Solution 4 Solution 3 Requires a bus switch on the board, LVTTL/LVCMOS 3.3 V I/Os. Fusion I/O Input 3.3 V 5.5 V 5.5 V Bus Switch IDTQS32X23 On-Chip Off-Chip Solution 4 2.5 V On-Chip Clamp Diode Requires one board resistor. Available for LVCMOS 2.5 V / 5.0 V. On-Chip Off-Chip 5.5 V 2.5 V Fusion I/O Input Rext1 |
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |