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EDB8164B4PR-1DATF-R 数据表(PDF) 44 Page - Micron Technology |
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EDB8164B4PR-1DATF-R 数据表(HTML) 44 Page - Micron Technology |
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44 / 152 page  cycle time of the device (tRC). The minimum time interval between ACTIVATE com- mands to different banks is tRRD. Figure 15: ACTIVATE Command Bankn row addr Row addr ACTIVATE NOP ACTIVATE READ PRECHARGE ACTIVATE NOP NOP Bankm row addr Row addr Bankn col addr Col addr Bankn Bankn row addr Row addr T0 T1 T2 T3 Tn Tn+1 Tn+2 Tn+3 CK_c CK_t CA[9:0] CMD tRRD tRCD tRC tRAS tRP Notes: 1. tRCD = 3, tRP = 3, tRRD = 2. 2. A PRECHARGE ALL command uses tRPab timing, and a single-bank PRECHARGE com- mand uses tRPpb timing. In this figure, tRP is used to denote either an all-bank PRE- CHARGE or a single-bank PRECHARGE. 8-Bank Device Operation Two rules regarding 8-bank device operation must be observed: One rule restricts the number of sequential ACTIVATE commands that can be issued; the second rule pro- vides additional RAS precharge time for a PRECHARGE ALL command. The 8-Bank Device Sequential Bank Activation Restriction: No more than four banks can be activated (or refreshed, in the case of REFpb) in a rolling tFAW window. To con- vert to clocks, divide tFAW[ns] by tCK[ns], and round up to the next integer value. For example, if RU(tFAW/tCK) is 10 clocks, and an ACTIVATE command is issued in clock n, no more than three further ACTIVATE commands can be issued at or between clock n + 1 and n + 9. REFpb also counts as bank activation for purposes of tFAW. The 8-Bank Device PRECHARGE ALL Provision: tRP for a PRECHARGE ALL command must equal tRPab, which is greater than tRPpb. 216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM ACTIVATE Command 09005aef85eb530a 216b_220b_2ch_2e0e_embedded_lpddr2.pdf – Rev. F 08 /16 EN 44 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2014 Micron Technology, Inc. All rights reserved. |
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