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EDB8164B4PR-1DATF-R 数据表(PDF) 74 Page - Micron Technology |
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EDB8164B4PR-1DATF-R 数据表(HTML) 74 Page - Micron Technology |
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74 / 152 page ![]() VREFDQ must be within their respective minimum/maximum operating ranges (see the Single-Ended AC and DC Input Levels for DQ and DM table). VREFDQ can be at any level between 0 and VDDQ; VREFCA can be at any level between 0 and VDD2 during self refresh. Before exiting self refresh, VREFDQ and VREFCA must be within specified limits (See AC and DC Logic Input Measurement Levels for Single-Ended Signals for details). After en- tering self refresh mode, the device initiates at least one all-bank REFRESH command internally during tCKESR. The clock is internally disabled during SELF REFRESH opera- tion to save power. The device must remain in self refresh mode for at least tCKESR. The user can change the external clock frequency or halt the external clock one clock after self refresh entry is registered; however, the clock must be restarted and stable before the device can exit SELF REFRESH operation. Exiting self refresh requires a series of commands. First, the clock must be stable prior to CKE returning HIGH. After the self refresh exit is registered, a minimum delay, at least equal to the self refresh exit interval (tXSR), must be satisfied before a valid command can be issued to the device. This provides completion time for any internal refresh in progress. For proper operation, CKE must remain HIGH throughout tXSR. NOP com- mands must be registered on each rising clock edge during tXSR. Using self refresh mode introduces the possibility that an internally timed refresh event could be missed when CKE is driven HIGH for exit from self refresh mode. Upon exiting self refresh, at least one REFRESH command (one all-bank command or eight per-bank commands) must be issued before issuing a subsequent SELF REFRESH command. Figure 48: SELF REFRESH Operation Exit SR Valid NOP NOP Enter SR NOP Enter self refresh mode Input clock frequency can be changed or clock can be stopped during self refresh. Valid tCKESR (MIN) tXSR (MIN) tIHCKE tIHCKE tISCKE tISCKE Exit self refresh mode Don’t Care 2 t (MIN) CK CK_t CS_n CK_c CMD CKE Notes: 1. Input clock frequency can be changed or stopped during self refresh, provided that upon exiting self-refresh, a minimum of two cycles of stable clocks are provided, and the clock frequency is between the minimum and maximum frequencies for the particular speed grade. 2. The device must be in the all banks idle state prior to entering self refresh mode. 3. tXSR begins at the rising edge of the clock after CKE is driven HIGH. 4. A valid command can be issued only after tXSR is satisfied. NOPs must be issued during tXSR. 216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM SELF REFRESH Operation 09005aef85eb530a 216b_220b_2ch_2e0e_embedded_lpddr2.pdf – Rev. F 08 /16 EN 74 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2014 Micron Technology, Inc. All rights reserved. |
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