| 数据搜索系统,热门电子元器件搜索 |
|
EDB8164B4PR-1DATF-R 数据表(PDF) 46 Page - Micron Technology |
|
|
|||||||||||||||||||||||||||||
EDB8164B4PR-1DATF-R 数据表(HTML) 46 Page - Micron Technology |
|
46 / 152 page ![]() Figure 17: READ Output Timing – tDQSCK (MAX) RL - 1 RL RL + BL/ 2 CK# CK DQS# DQS DQ tLZ(DQS) D OUT D OUT D OUT D OUT tHZ(DQS) tRPRE tRPST tDQSCKmax tQH tLZ(DQ) tHZ(DQ) tDQSQmax tCL tCH tQH tDQSQmax Transitioning data Notes: 1. tDQSCK can span multiple clock periods. 2. An effective burst length of 4 is shown. Figure 18: READ Output Timing – tDQSCK (MIN) RL - 1 RL RL + BL/ 2 CK# CK DQS# DQS DQ tLZ(DQS) D OUT D OUT D OUT D OUT tHZ(DQS) tRPRE tDQSCKmin tQH tLZ(DQ) tDQSQmax tCL tCH tQH tDQSQmax tRPST tHZ(DQ) Transitioning data Note: 1. An effective burst length of 4 is shown. 216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM Burst READ Command 09005aef85eb530a 216b_220b_2ch_2e0e_embedded_lpddr2.pdf – Rev. F 08 /16 EN 46 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2014 Micron Technology, Inc. All rights reserved. |
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |