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EDB8164B4PR-1DATF-R 数据表(PDF) 12 Page - Micron Technology |
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EDB8164B4PR-1DATF-R 数据表(HTML) 12 Page - Micron Technology |
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12 / 152 page ![]() 3. VDD2 and VDDQ are connected internally in the package. 4. The Quad die product IDD for each channel will be the sum of the IDD's for the state of operation for each rank (CS) in the channel. Table 5: IDD6 Full-Array Self Refresh Current at 45°C for Dual die product VDD2, VDDQ = 1.14–1.30V; VDD1 = 1.70–1.95V PASR Supply Value Unit Parameters/Conditions Full array VDD1 400 μA All devices in self refresh CK_t = LOW, CK_c = HIGH; CKE is LOW; CA bus inputs are STABLE; Data bus inputs are STABLE VDDQVDDQ 1600 1/2 array VDD1 320 VDDQVDDQ 1000 1/4 array VDD1 260 VDDQVDDQ 600 1/8 array VDD1 240 VDDQVDDQ 400 Note: 1. IDD6 45°C is the typical of the distribution of the arithmetic mean, Quad die product will be double these values when all die are in self refresh mode. Table 6: IDD6 Partial-Array Self Refresh Current at 85°C for Dual die product VDD2, VDDQ = 1.14–1.30V; VDD1 = 1.70–1.95V PASR Supply Value Unit Parameters/Conditions Full array VDD1 1800 μA All devices in self refresh CK_t = LOW, CK_c = HIGH; CKE is LOW; CA bus inputs are STABLE; Data bus inputs are STABLE VDDQVDDQ 6400 1/2 array VDD1 1300 VDDQVDDQ 4400 1/4 array VDD1 1100 VDDQVDDQ 3400 1/8 array VDD1 1000 VDDQVDDQ 2800 Note: 1. IDD6 85°C is the maximum of the distribution of the arithmetic mean, Quad die product will be double these values when all die are in self refresh mode. 216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM IDD Specifications 09005aef85eb530a 216b_220b_2ch_2e0e_embedded_lpddr2.pdf – Rev. F 08 /16 EN 12 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2014 Micron Technology, Inc. All rights reserved. |
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