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EDB8164B4PR-1DATF-R 数据表(PDF) 132 Page - Micron Technology

部件名 EDB8164B4PR-1DATF-R
功能描述  216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM Features
PDF  152 Pages
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制造商  MICRON [Micron Technology]
网页  http://www.micron.com
标志 MICRON - Micron Technology

EDB8164B4PR-1DATF-R 数据表(HTML) 132 Page - Micron Technology

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Table 91: AC Timing (Continued)
Notes 1–2 apply to all parameters and conditions. AC timing parameters must satisfy the tCK minimum conditions (in mul-
tiples of tCK) as well as the timing specifications when values for both are indicated.
Parameter
Symbol
Min/
Max
tCK
Min
Data Rate
Unit Notes
1066
933
800
667
533
400
333
Maximum clock jitter between
two consectuive clock cycles
(with allowed jitter)
tJIT(cc),
allowed
MAX
180
190
200
220
240
280
300
ps
Duty cycle jitter
(with allowed jitter)
tJIT(duty),
allowed
MIN
MIN ((tCH(abs),min - tCH(avg),min),
(tCL(abs),min - tCL(avg),min)) × tCK(avg)
ps
MAX
MAX ((tCH(abs),max - tCH(avg),max),
(tCL(abs),max - tCL(avg),max)) × tCK(avg)
Cumulative errors across 2 cycles
tERR(2per),
allowed
MIN
-132
-140
-147
-162
-177
-206
-221
ps
MAX
132
140
147
162
177
206
221
Cumulative errors across 3 cycles
tERR(3per),
allowed
MIN
-157
-166
-175
-192
-210
-245
-262
ps
MAX
157
166
175
192
210
245
262
Cumulative errors across 4 cycles
tERR(4per),
allowed
MIN
-175
-185
-194
-214
-233
-272
-291
ps
MAX
175
185
194
214
233
272
291
Cumulative errors across 5 cycles
tERR(5per),
allowed
MIN
-188
-199
-209
-230
-251
-293
-314
ps
MAX
188
199
209
230
251
293
314
Cumulative errors across 6 cycles
tERR(6per),
allowed
MIN
-200
-211
-222
-244
-266
-311
-333
ps
MAX
200
211
222
244
266
311
333
Cumulative errors across 7 cycles
tERR(7per),
allowed
MIN
-209
-221
-232
-256
-279
-325
-348
ps
MAX
209
221
232
256
279
325
348
Cumulative errors across 8 cycles
tERR(8per),
allowed
MIN
-217
-229
-241
-266
-290
-338
-362
ps
MAX
217
229
241
266
290
338
362
Cumulative errors across 9 cycles
tERR(9per),
allowed
MIN
-224
-237
-249
-274
-299
-349
-374
ps
MAX
224
237
249
274
299
349
374
Cumulative errors across 10 cycles
tERR(10per),
allowed
MIN
-231
-244
-257
-282
-308
-359
-385
ps
MAX
231
244
257
282
308
359
385
Cumulative errors across 11 cycles
tERR(11per),
allowed
MIN
-237
-250
-263
-289
-316
-368
-395
ps
MAX
237
250
263
289
316
368
395
Cumulative errors across 12 cycles
tERR(12per),
allowed
MIN
-242
-256
-269
-296
-323
-377
-403
ps
MAX
242
256
269
296
323
377
403
Cumulative errors across n = 13,
14, 15…, 49, 50 cycles
tERR(nper),
allowed
MIN
tERR(nper),allowed,min = (1 + 0.68ln(n)) ×
tJIT(per),allowed,min
ps
MAX
tERR(nper), allowed,max = (1 + 0.68ln(n)) ×
tJIT(per),allowed,max
ZQ Calibration Parameters
Initialization calibration time
tZQINIT
MIN
1
1
1
1
1
1
1
μs
Long calibration time
tZQCL
MIN
6
360
360
360
360
360
360
360
ns
Short calibration time
tZQCS
MIN
6
90
90
90
90
90
90
90
ns
216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM
AC Timing
09005aef85eb530a
216b_220b_2ch_2e0e_embedded_lpddr2.pdf – Rev. F 08 /16 EN
132
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2014 Micron Technology, Inc. All rights reserved.



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