STM32WLE4JC datasheet(67/146 Pages) STMICROELECTRONICS

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DS13105 Rev 9

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STM32WLE5/E4xx

Electrical characteristics

133

5.3.3

Sub-GHz radio characteristics

Electrical characteristics of the sub-GHz radio are given with the following conditions unless

otherwise specified:

•

VDD = 3.3 V. The current consumption is measured as described in Figure 14.

IDD includes current consumption of all supplies (VDDRF, VDDSMPS, VDD, VDDA, VBAT).

All peripherals except Sub-GHz radio are disabled and the system is in Standby mode.

•

Temperature = 25 °C

•

HSE32 = 32 MHz

•

FRF = 434/868/915 MHz

•

All RF impedances matched using reference design

•

Reference design implementing a 32 MHz crystal oscillator

•

Transmit mode output power defined in 50 Ω load

•

FSK BER (bit error rate) = 0.1 %, 2-level FSK modulation without pre-filtering,

BR = 4.8 Kbit/s, FDA = 5 kHz, BW_F = 20 kHz

•

LoRa PER (packet error rate) = 1 %, packet of 64 bytes, preamble of 8 bytes, error

correction code CR = 4/5, CRC on payload enabled, no reduced encoding, no implicit

header

•

Sensitivities given using highest LNA gain step

•

Power consumption measured with -140 dBm signal and AGC ON

•

Blocking immunity, ACR and co-channel rejection, given for a single tone interferer and

referenced to sensitivity +6 dB, blocking tests performed with unmodulated signal

•

Bandwidth expressed on DSB (double-sided band)

Table 26. Operating range of RF pads

Pad

Description

Max

Unit

RFI_P/RFI_N

RF input power

dBm

RFO_LP/RFO_HP/VR_PA

Voltage Standing Wave Ratio (VSWR)

10:1

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