STM32WLE4JC datasheet(75/146 Pages) STMICROELECTRONICS

75 / 146 page

DS13105 Rev 9

75/146

STM32WLE5/E4xx

Electrical characteristics

133

5.3.5

Embedded reset and power-control block characteristics

Parameters given in the table below are derived from tests performed under the ambient

temperature conditions summarized in Table 25: General operating conditions.

Table 34. Embedded reset and power-control block characteristics

Symbol

Parameter

Conditions(1)

Min

Typ

Max

Unit

tRSTTEMPO(2)

Reset temporization after BOR0 is detected VDD rising

250

400

μs

VBOR0(2)

Brownout reset threshold 0

Rising edge

1.72

1.76

1.80

Falling edge

1.70

1.74

1.78

VBOR1

Brownout reset threshold 1

Rising edge

2.06

2.10

2.14

Falling edge

1.96

2.00

2.04

VBOR2

Brownout reset threshold 2

Rising edge

2.26

2.31

2.35

Falling edge

2.16

2.20

2.24

VBOR3

Brownout reset threshold 3

Rising edge

2.56

2.61

2.66

Falling edge

2.47

2.52

2.57

VBOR4

Brownout reset threshold 4

Rising edge

2.85

2.90

2.95

Falling edge

2.76

2.81

2.86

VPVD0

Programmable voltage detector threshold 0

Rising edge

1.88

1.95

2.02

Falling edge

1.83

1.90

1.97

VPVD1

PVD threshold 1

Rising edge

2.26

2.31

2.36

Falling edge

2.15

2.20

2.25

VPVD2

PVD threshold 2

Rising edge

2.41

2.46

2.51

Falling edge

2.31

2.36

2.41

VPVD3

PVD threshold 3

Rising edge

2.56

2.61

2.66

Falling edge

2.47

2.52

2.57

VPVD4

PVD threshold 4

Rising edge

2.69

2.74

2.79

Falling edge

2.59

2.64

2.69

VPVD5

PVD threshold 5

Rising edge

2.85

2.91

2.96

Falling edge

2.75

2.81

2.86

VPVD6

PVD threshold 6

Rising edge

2.92

2.98

3.04

Falling edge

2.84

2.90

2.96

Vhyst_BORH0

Hysteresis voltage of BORH0

Hysteresis in

continuous mode

-20

Hysteresis in

other mode

-30

Vhyst_BOR_PVD

Hysteresis voltage of BORH (except

BORH0) and PVD

100

IDD (BOR_PVD)(2)

BOR(3) (except BOR0) and PVD

consumption from VDD

1.1

1.6

µA

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