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STM32WLE4JC 数据表(PDF) 76 Page - STMicroelectronics |
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STM32WLE4JC 数据表(HTML) 76 Page - STMicroelectronics |
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76 / 146 page ![]() Electrical characteristics STM32WLE5/E4xx 76/146 DS13105 Rev 9 5.3.6 Embedded voltage reference Parameters given in the table below are derived from tests performed under the ambient temperature and supply voltage conditions summarized in Table 25: General operating conditions. VPVM3 VDDA peripheral voltage monitoring Rising edge 1.61 1.65 1.69 V Falling edge 1.6 1.64 1.68 Vhyst_PVM3 PVM3 hysteresis - - 10 - mV IDD (PVM3)(2) PVM3 consumption from VDD -- 2 - µA 1. Continuous mode means Run and Sleep modes, or temperature sensor enable in LPRun and LPSleep modes. 2. Guaranteed by design. 3. BOR0 is enabled in all modes (except Shutdown) and its consumption is therefore included in the supply current characteristics tables. Table 34. Embedded reset and power-control block characteristics (continued) Symbol Parameter Conditions(1) Min Typ Max Unit Table 35. Embedded internal voltage reference Symbol Parameter Conditions Min Typ Max Unit VREFINT Internal reference voltage –40 °C < TJ < +105 °C 1.182 1.212 1.232 V tS_vrefint (1) ADC sampling time when reading the internal reference voltage -4(2) -- µs tstart_vrefint Start time of reference voltage buffer when ADC is enable -- 8 12(2) IDD(VREFINTBUF) VREFINT buffer consumption from VDD when converted by ADC - - 12.5 20(2) µA ∆VREFINT Internal reference voltage spread over the temperature range VDD = 3.3 V - 5 7.5(2) mV TCoeff Temperature coefficient –40 °C < TJ < +105 °C - 30 50(2) ppm/°C ACoeff Long term stability 1000 hours, T = 25 °C - 300 1000(2) ppm VDDCoeff Voltage coefficient 3.0 V < VDD < 3.6 V - 250 1200(2) ppm/V VREFINT_DIV1 1/4 reference voltage - 24 25 26 % VREFINT VREFINT_DIV2 1/2 reference voltage 49 50 51 VREFINT_DIV3 3/4 reference voltage 74 75 76 1. The shortest sampling time can be determined in the application by multiple iterations. 2. Guaranteed by design. |
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