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ST52T430 数据表(PDF) 24 Page - STMicroelectronics |
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ST52T430 数据表(HTML) 24 Page - STMicroelectronics |
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24 / 88 page ![]() ST52T430/E430 24/88 Figure 3.2 Eprom Programming Timing The operations above are managed by using the internal 4-bit EPROM Control Register. The reading phase is executed with VPP= 5V±5%, while the verify/Margin Mode phase needs VPP= 12V ±5%. The Blank Check must be a reading operation with VPP= 5V±5%. Table 3.2 illustrates EPROM Control Register codes used to identify the operation running. 3.1 EPROM Programming Phase Procedure The Programming mode is selected by applying 12V ±5% voltage or 5V±5% voltage to the V PP pin and setting the control signal as following: RESET =Vss TEST =Vss If the VPP voltage is 5V±5% only reading may be performed. RST_ADD, INC_ADD, RST_CONF, INC_CONF and PHASE are the control signals used during the Programming Mode. PHASE, RST_CONF and RST_ADD signals are active on level, the others are active on rising edge. Table 3.2 EPROM Control Register OPERATION REGISTER VALUE Stand By 0 Memory Reading/Verify 1 Memory Unlock and Lock Status Reading 2 Memory Writing 3 Memory Lock 4 ID CODE Writing 5 Memory Lock Status Reading/Verify 9 ID CODE Reading/ Verify 10 MEMORY UNLOCK MEMORY WRITING LOCATION ADDRESS =1 DATA IN MEMORY VERIFY MARGIN MODE DATA OUT VALID DATA VALID DATA VALID DATA DATA OUT DATA OUT 100nS 10 µS PA(0:7) RST_ADD RST_CONF INC_ADD INC_CONF PHASE |
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