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H8/3028F 数据表(PDF) 650 Page - Renesas Technology Corp |
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H8/3028F 数据表(HTML) 650 Page - Renesas Technology Corp |
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650 / 923 page ![]() Rev. 2.00, 09/03, page 620 of 890 Period during which flash memory access is prohibited (x: Wait time after setting SWE bit, y: Wait time after clearing SWE bit)*2 Period during which flash memory can be programmed (Execution of program in flash memory prohibited, and data reads other than verify operations prohibited) φ VCC FWE tOSC1 Min 0 µs tMDS MD2 to MD0* 1 RES SWE bit SWE set SWE cleared Program- ming/ erasing possible Wait time: x Wait time: y Notes: 1. Except when switching modes, the level of the mode pins (MD2–MD0) must be fixed until power-off by pulling the pins up or down. 2. See section 21.2.6, Flash Memory Characteristics. Figure 18.17 Power-On/Off Timing (User Program Mode) |
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