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H8/3028F 数据表(PDF) 651 Page - Renesas Technology Corp |
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H8/3028F 数据表(HTML) 651 Page - Renesas Technology Corp |
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651 / 923 page ![]() Rev. 2.00, 09/03, page 621 of 890 Period during which flash memory access is prohibited (x: Wait time after setting SWE bit, y: Wait time after clearing SWE bit)* 3 Period during which flash memory can be programmed (Execution of program in flash memory prohibited, and data reads other than verify operations prohibited) φ VCC FWE tOSC1 Min 0 µs tMDS tMDS tMDS tRESW MD2 to MD0 RES SWE bit Mode change* 1 User mode Boot mode User program mode SWE set SWE cleared *2 Mode change* 1 User mode User program mode Notes: 1. When entering boot mode or making a transition from boot mode to another mode, mode switching must be carried out by means of RES input. The state of ports with multiplexed address functions and bus control output pins ( CSn, AS, RD, WR) will change during this switchover interval (the interval during which the RES pin input is low), and therefore these pins should not be used as output signals during this time. 2. When making a transition from boot mode to another mode, the mode programming setup time t MDS must be satisfied with respect to RES clearance timing. 3. See section 21.2.6, Flash Memory Characteristics. Figure 18.18 Mode Transition Timing (Example: Boot Mode → → → → User Mode ↔ ↔ ↔ ↔ User Program Mode) |
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