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H8/3028F 数据表(PDF) 803 Page - Renesas Technology Corp |
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H8/3028F 数据表(HTML) 803 Page - Renesas Technology Corp |
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803 / 923 page ![]() Rev. 2.00, 09/03, page 773 of 890 FLMCR (FLMCR2)—Flash Memory Control Register 2 H'EE031 Flash Memory Bit Initial value Read/Write 0 R 7 FLER 0 — 6 — 0 — 5 — 0 — 4 — 0 — 3 — 0 — 2 — 0 — 1 — 0 — 0 — Flash memory error Reserved bits Notes: 1. Writes to FLMCR2 are prohibited. 2. This register is used only by the flash memory version and do not exist in the mask ROM version. In the mask ROM version reading these addresses always returns a value of 1, and it is not possible to write to them. EBR (EBR1)—Erase Block Register H'EE032 Flash Memory Bit 7 EB7 6 EB6 5 EB5 4 EB4 3 EB3 2 EB2 1 EB1 0 EB0 0 1 Block EB7 to EB0 is not selected (Initial value) Block EB7 to EB0 is selected Block 7 to 0 Initial value Read/Write 0 R 0 R/W 0 R/W 0 R/W 0 R/W 0 R/W 0 R/W 0 R/W Initial value Read/Write Modes 5 and 7 Modes 1 to 4, and 6 0 R 0 R 0 R 0 R 0 R 0 R 0 R 0 R Notes: 1. When not erasing, clear EBR to H'00. Writes are invalid. A value of 1 cannot be set in this register in mode 6. 2. This register is used only by the flash memory version and do not exist in the mask ROM version. In the mask ROM version reading these addresses always returns a value of 1, and it is not possible to write to them. |
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