STM8S103F2 datasheet(70/117 Pages) STMICROELECTRONICS

部件名	STM8S103F2

功能描述	Access line, 16 MHz STM8S 8-bit MCU, up to 8 Kbytes Flash, data EEPROM,10-bit ADC, 3 timers, UART, SPI, I²C

PDF	117 Pages

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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70 / 117 page

Memory characteristics

10.3.5

RAM and hardware registers

Table 36: RAM and hardware registers

Unit

Min

Conditions

Parameter

Symbol

VIT-max

(2)

Halt mode (or reset)

Data retention mode

(1)

VRM

(1) Minimum supply voltage without losing data stored in RAM (in halt mode or under reset)

or in hardware registers (only in halt mode). Guaranteed by design, not tested in production.

(2) Refer to the Operating conditions section for the value of V

IT-max

Flash program memory/data EEPROM memory

Table 37: Flash program memory/data EEPROM memory

Unit

Max

Typ

Min

(1)

Conditions

Parameter

Symbol

5.5

2.95

fCPU ≤ 16 MHz

Operating voltage

(all modes, execution/

write/erase)

VDD

6.6

Standard programming time

(including erase) for

tprog

byte/word/block (1 byte/

4 bytes/64 bytes)

3.33

Fast programming time for

1 block (64 bytes)

3.33

Erase time for 1 block

(64 bytes)

terase

cycles

100

000

TA = +85 °C

Erase/write cycles

(2)

(program memory)

NRW

1 M

300

000

TA = +125 °C

Erase/write cycles

(data memory)

(2)

years

TRET = 55°C

Data retention (program

and data memory) after 10k

tRET

erase/write cycles at

TA = +55 °C

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Electrical characteristics

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