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STM8S103F2 数据表(PDF) 74 Page - STMicroelectronics |
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STM8S103F2 数据表(HTML) 74 Page - STMicroelectronics |
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74 / 117 page ![]() Unit Max Min Conditions Parameter Symbol - 2.1 (1) IIO = 4 mA, VDD = 3.3 V Output high level with 4 pins sourced (1) Data based on characterization results, not tested in production Table 40: Output driving current (true open drain ports) Unit Max Conditions Parameter Symbol V 1 .0 IIO = 10 mA, VDD = 5 V Output low level with 2 pins sunk VOL 1.5 (1) IIO = 10 mA, VDD = 3.3 V Output low level with 2 pins sunk VOL 2.0 (1) IIO = 20 mA, VDD = 5 V Output low level with 2 pins sunk VOL (1) Data based on characterization results, not tested in production Table 41: Output driving current (high sink ports) Unit Max Min Conditions Parameter Symbol V 0.8 - IIO = 10 mA, VDD = 5 V Output low level with 8 pins sunk VOL V 1.0 (1) - IIO = 10 mA, VDD = 3.3 V Output low level with 4 pins sunk VOL 1.5 (1) - IIO = 20 mA, VDD = 5 V Output low level with 4 pins sunk - 4.0 IIO = 10 mA, VDD = 5 V Output high level with 8 pins sourced VOH - 2.1 (1) IIO = 10 mA, VDD = 3.3 V Output high level with 4 pins sourced - 3.3 (1) IIO = 20 mA, VDD = 5 V Output high level with 4 pins sourced (1) Data based on characterization results, not tested in production DocID15441 Rev 9 74/117 STM8S103K3 STM8S103F3 STM8S103F2 Electrical characteristics |
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