STM8S103F2 datasheet(92/117 Pages) STMICROELECTRONICS

92 / 117 page

Unit

Conditions

Parameter

Symbol

Max fHSE/fCPU

(1)

Monitored

frequency band

General

conditions

16 MHz/

16 MHz

16 MHz/

8 MHz

Conforming to

SAE IEC

61967-2

130 MHz

130 MHz to

1 GHz

2.5

SAE EMI level

SAE EMI

level

(1) Data based on characterisation results, not tested in production.

Absolute maximum ratings (electrical sensitivity)

10.3.11.4

Based on three different tests (ESD, DLU and LU) using specific measurement methods, the

product is stressed to determine its performance in terms of electrical sensitivity. For more

details, refer to the application note AN1181.

Electrostatic discharge (ESD)

10.3.11.5

Electrostatic discharges (a positive then a negative pulse separated by 1 second) are applied

to the pins of each sample according to each pin combination. The sample size depends on

the number of supply pins in the device (3 parts*(n+1) supply pin). One model can be simulated:

Human body model. This test conforms to the JESD22-A114A/A115A standard. For more

details, refer to the application note AN1181.

Table 50: ESD absolute maximum ratings

Unit

Maximum

value

(1)

Class

Conditions

Ratings

Symbol

4000

TA = 25°C, conforming to

Electrostatic discharge

VESD(HBM)

JESD22-A114

voltage

(Human body model)

1000

TA LQFP32 package =

Electrostatic discharge

VESD(CDM)

25°C, conforming to

voltage

SD22-C101

(Charge device model)

DocID15441 Rev 9

92/117

STM8S103K3 STM8S103F3 STM8S103F2

Electrical characteristics

STM8S103F2 数据表(PDF) 92 Page - STMicroelectronics

STM8S103F2 数据表(HTML) 92 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 ...More

数据表下载