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STM8S103F2 数据表(PDF) 80 Page - STMicroelectronics |
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STM8S103F2 数据表(HTML) 80 Page - STMicroelectronics |
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80 / 117 page ![]() Unit Max Typ Min Conditions Parameter Symbol VDD + 0.3 - 0.7 x VDD IOL=2 mA NRST input high VIH(NRST) level voltage (1) 0.5 - - NRST output low VOL(NRST) level voltage (1) kΩ 80 55 30 NRST pull-up RPU(NRST) resistor (2) ns 75 - - NRST input filtered tI FP(NRST) pulse (3) - - 500 NRST input not tIN FP(NRST) filtered pulse (3) μs - - 20 NRST output pulse (3) tOP(NRST) (1) Data based on characterization results, not tested in production. (2) The R PU pull-up equivalent resistor is based on a resistive transistor (3) Data guaranteed by design, not tested in production. Figure 35: Typical NRST VIL and VIH vs VDD @ 4 temperatures DocID15441 Rev 9 80/117 STM8S103K3 STM8S103F3 STM8S103F2 Electrical characteristics |
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