STM32F217VG datasheet(74/175 Pages) STMICROELECTRONICS

74 / 175 page

Electrical characteristics

STM32F21xxx

74/175

DocID17050 Rev 9

6.3.6

Supply current characteristics

The current consumption is a function of several parameters and factors such as the

operating voltage, ambient temperature, I/O pin loading, device software configuration,

operating frequencies, I/O pin switching rate, program location in memory and executed

binary code.

The current consumption is measured as described in Figure 18: Current consumption

measurement scheme.

All Run mode current consumption measurements given in this section are performed using

CoreMark code.

VBOR2

Brownout level 2

threshold

Falling edge

2.44

2.50

2.56

Rising edge

2.53

2.59

2.63

VBOR3

Brownout level 3

threshold

Falling edge

2.75

2.83

2.88

Rising edge

2.85

2.92

2.97

VBORhyst(1)

BOR hysteresis

100

TRSTTEMPO(1)(2) Reset temporization

0.5

1.5

3.0

IRUSH(1)

InRush current on

voltage regulator

power-on (POR or

wakeup from Standby)

160

200

ERUSH(1)

InRush energy on

voltage regulator

power-on (POR or

wakeup from Standby)

VDD = 1.8 V, TA = 105 °C,

IRUSH = 171 mA for 31 µs

5.4

µC

1. Guaranteed by design, not tested in production.

2. The reset temporization is measured from the power-on (POR reset or wakeup from VBAT) to the instant

when first instruction is read by the user application code.

Table 18. Embedded reset and power control block characteristics (continued)

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

STM32F217VG 数据表(PDF) 74 Page - STMicroelectronics

STM32F217VG 数据表(HTML) 74 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 ...More

数据表下载