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STM32F217VG 数据表(PDF) 90 Page - STMicroelectronics

部件名 STM32F217VG
功能描述  ARM-based 32-bit MCU, 150DMIPs, up to 1 MB Flash/1284KB RAM
PDF  175 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STM32F217VG 数据表(HTML) 90 Page - STMicroelectronics

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Electrical characteristics
STM32F21xxx
90/175
DocID17050 Rev 9
Note:
For information on electing the crystal, refer to the application note AN2867 “Oscillator
design guide for ST microcontrollers” available from the ST website www.st.com.
Figure 31. Typical application with a 32.768 kHz crystal
6.3.9
Internal clock source characteristics
The parameters given in Table 31 and Table 32 are derived from tests performed under
ambient temperature and VDD supply voltage conditions summarized in Table 13.
High-speed internal (HSI) RC oscillator
Table 30. LSE oscillator characteristics (fLSE = 32.768 kHz) (1)
1. Guaranteed by design, not tested in production.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
RF
Feedback resistor
-
18.4
-
M
Ω
IDD
LSE current consumption
-
-
1
µA
gm
Oscillator Transconductance
2.8
-
-
µA/V
tSU(LSE)(2)
2. tSU(LSE) is the startup time measured from the moment it is enabled (by software) to a stabilized
32.768 kHz oscillation is reached. This value is measured for a standard crystal resonator and it can vary
significantly with the crystal manufacturer
startup time
VDD is stabilized
-
2
-
s
ai17531
OSC32_OU T
OSC32_IN
fLSE
CL1
RF
STM32F
32.768 kH z
resonator
Resonator with
integrated capacitors
Bias
controlled
gain
CL2
Table 31. HSI oscillator characteristics (1)
1. VDD = 3.3 V, TA = –40 to 105 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
fHSI
Frequency
-
16
-
MHz
ACCHSI
Accuracy of the HSI
oscillator
User-trimmed with the RCC_CR
register(2)
--
1
%
Factory-
calibrated
TA = –40 to 105 °C
–8
-
4.5
%
TA = –10 to 85 °C
–4
-
4
%
TA = 25 °C
–1
-
1
%
tsu(HSI)(3)
HSI oscillator
startup time
-2.2
4
µs
IDD(HSI)
HSI oscillator
power consumption
-60
80
µA



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