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STM32F217VG 数据表(PDF) 86 Page - STMicroelectronics |
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STM32F217VG 数据表(HTML) 86 Page - STMicroelectronics |
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86 / 175 page ![]() Electrical characteristics STM32F21xxx 86/175 DocID17050 Rev 9 6.3.7 Wakeup time from low-power mode The wakeup times given in Table 26 is measured on a wakeup phase with a 16 MHz HSI RC oscillator. The clock source used to wake up the device depends from the current operating mode: • Stop or Standby mode: the clock source is the RC oscillator • Sleep mode: the clock source is the clock that was set before entering Sleep mode. All timings are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 13. APB2 SDIO 0.69 mA TIM1 1.06 TIM8 1.03 TIM9 0.58 TIM10 0.37 TIM11 0.39 ADC1(4) 2.13 ADC2(4) 2.04 ADC3(4) 2.12 SPI1 1.20 USART1 0.38 USART6 0.37 1. External clock is 25 MHz (HSE oscillator with 25 MHz crystal) and PLL is on. 2. EN1 bit is set in DAC_CR register. 3. EN2 bit is set in DAC_CR register. 4. fADC = fPCLK2/2, ADON bit set in ADC_CR2 register. Table 25. Peripheral current consumption (continued) Peripheral(1) Typical consumption at 25 °C Unit Table 26. Low-power mode wakeup timings Symbol Parameter Min(1) Typ(1) Max(1) Unit tWUSLEEP(2) Wakeup from Sleep mode - 1 - µs tWUSTOP(2) Wakeup from Stop mode (regulator in Run mode) - 13 - µs Wakeup from Stop mode (regulator in low power mode) - 17 40 Wakeup from Stop mode (regulator in low power mode and Flash memory in Deep power down mode) -110 - tWUSTDBY(2)(3) Wakeup from Standby mode 260 375 480 µs 1. Based on characterization, not tested in production. 2. The wakeup times are measured from the wakeup event to the point in which the application code reads the first instruction. 3. tWUSTDBY minimum and maximum values are given at 105 °C and –45 °C, respectively. |
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