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STM32F217VG 数据表(PDF) 91 Page - STMicroelectronics |
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STM32F217VG 数据表(HTML) 91 Page - STMicroelectronics |
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91 / 175 page  DocID17050 Rev 9 91/175 STM32F21xxx Electrical characteristics 174 Figure 32. ACCHSI versus temperature Low-speed internal (LSI) RC oscillator 2. Refer to application note AN2868 “STM32F10xxx internal RC oscillator (HSI) calibration” available from the ST website www.st.com. 3. Guaranteed by design, not tested in production. Table 32. LSI oscillator characteristics (1) 1. VDD = 3 V, TA = –40 to 105 °C unless otherwise specified. Symbol Parameter Min Typ Max Unit fLSI(2) 2. Based on characterization, not tested in production. Frequency 17 32 47 kHz tsu(LSI)(3) 3. Guaranteed by design, not tested in production. LSI oscillator startup time - 15 40 µs IDD(LSI)(3) LSI oscillator power consumption - 0.4 0.6 µA MS19012V2 -8 -6 -4 -2 0 2 4 6 -45 -35 -25 -15 -5 5 15 25 35 45 55 65 75 85 95 105 115 125 Temperature (°C) max avg min |
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