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MAS281 数据表(PDF) 23 Page - Dynex Semiconductor |
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MAS281 数据表(HTML) 23 Page - Dynex Semiconductor |
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23 / 55 page ![]() MAS281 23/55 Operation Op Code/Ext Mnemonic Format Cycles * LOGICAL Inclusive Logical OR E1 ORR R 1 0 0 3X ORB B 2 1 0 4X F ORBX BX 2 1 0 E0 OR D, DX 3 0 0 4A 8 ORIM IM 2 0 0 Logical AND E3 ANDR R 1 0 0 3X ANDB B 2 1 0 4X E ANDX BX 2 1 0 E2 AND D, DX 3 0 0 4A 7 ANDM IM 2 0 0 Exclusive Logical OR E5 XORR R 1 0 0 E4 XOR D, DX 3 0 0 4A 9 XORM IM 2 0 0 Logical NAND E7 NR R 1 1 0 E6 N D, DX 3 1 0 4A B NIM IM 2 1 0 Set Bit 51 SBR R 1 0 0 50 SB D, DX 4 1 0 52 SBI I, IX 5 2 0 Reset Bit 54 RBR R 1 1 0 53 RB D, DX 4 1 0 55 RBI I ,IX 5 2 0 Test Bit 57 TBR R 1 0 0 56 TB D, DX 3 0 0 58 TBI I, IX 4 1 0 Test and Set Bit 59 TSB D,DX 4 0 2 Set Variable Bit in Register 5A SVBR R 1 0 1 Reset Variable Bit in Register 5C RVBR R 1 1 1 Test Variable Bit in Register 5E TVBR R 1 0 1 Store Register Through Mask 97 SRM D,DX 4 3 0 BYTE Load From Upper Byte 8B LUB D,DX 3 0 0 8D LUBI I,IX 4 1 0 Load From Lower Byte 8C LLB D DX 3 1 0 8E LLBI I, IX 4 2 0 Store Into Upper Byte 9B STUB D,DX 4 1 0 9D SUB I I, IX 5 3 0 Store Into Lower Byte 9C STLB D,DX 4 1 0 9E SLBI I,IX 5 2 0 Exchange Bytes in Register EC XBR S 1 0 1 * M = memory, P = processor (5 OSC cycles), B = processor (6 OSC cycles). Table 7a: Instruction Summary (continued) MP B |
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