MAS281 datasheet(54/55 Pages) DYNEX

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MAS281

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11.0 RADIATION TOLERANCE

Total Dose Radiation Testing

For product procured to guaranteed total dose radiation

levels, each wafer lot will be approved when all sample

devices from each lot pass the total dose radiation test.

The sample devices will be subjected to the total dose

radiation level (Cobalt-60 Source), defined by the ordering

code, and must continue to meet the electrical parameters

specified in the data sheet. Electrical tests, pre and post

irradiation, will be read and recorded.

Dynex Semiconductor can provide radiation testing

compliant with MIL-STD-883 test method 1019 Ionizing

Radiation (Total Dose).

Total Dose (Function to specification)*

3x10

5 Rad(Si)

Transient Upset (Stored data loss)

1x10

11 Rad(Si)/sec

Transient Upset (Survivability)

>1x10

12 Rad(Si)/sec

Neutron Hardness (Function to specification)

>1x10

15 n/cm2

Single Event Upset**

<1x10

-10 Errors/bit day

Latch Up

Not possible

* Other total dose radiation levels available on request

** Worst case galactic cosmic ray upset - interplanetary/high altitude orbit

Figure 32: Radiation Hardness Parameters

12.0 ORDERING INFORMATION

The processor can be ordered in the form of a module,

consisting of three chips in leadless chip carriers, mounted on

a ceramic tile. The module can be supplied with dual-in-line (C)

or flatpack (F) lead configurations.

The three chips which form the processor can be packaged

as separate devices. They are available in leadless chip carrier

(L), flatpack (F), or ceramic dual-in-line packages (C).

Module - MAx281xxx

Chip Set - MAx17501xxx

MAx17502xxx

MAx17503xxx

MAS281 数据表(PDF) 54 Page - Dynex Semiconductor

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