STM32F756VG datasheet(152/228 Pages) STMICROELECTRONICS

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Electrical characteristics

STM32F756xx

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DocID027589 Rev 4

5.3.22

Temperature sensor characteristics

5.3.23

VBAT monitoring characteristics

5.3.24

Reference voltage

The parameters given in Table 71 are derived from tests performed under ambient

temperature and VDD supply voltage conditions summarized in Table 17.

Table 68. Temperature sensor characteristics

Symbol

Parameter

Min

Typ

Max

Unit

TL(1)

VSENSE linearity with temperature

±1

±2°C

Avg_Slope(1) Average slope

2.5

mV/°C

V25(1)

Voltage at 25 °C

0.76

tSTART(2)

Startup time

µs

TS_temp(2)

ADC sampling time when reading the temperature (1 °C accuracy)

µs

1. Guaranteed by characterization results.

2. Guaranteed by design.

Table 69. Temperature sensor calibration values

Symbol

Parameter

Memory address

TS_CAL1

TS ADC raw data acquired at temperature of 30 °C, VDDA= 3.3 V

0x1FF0 F44C - 0x1FF0 F44D

TS_CAL2

TS ADC raw data acquired at temperature of 110 °C, VDDA= 3.3 V 0x1FF0 F44E - 0x1FF0 F44F

Table 70. VBAT monitoring characteristics

Symbol

Parameter

Min

Typ

Max

Unit

Resistor bridge for VBAT

-50-

Ratio on VBAT measurement

Er(1)

Error on Q

–1

TS_vbat(2)(2)

ADC sampling time when reading the VBAT

1 mV accuracy

µs

1. Guaranteed by design.

2. Shortest sampling time can be determined in the application by multiple iterations.

Table 71. internal reference voltage

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VREFINT

Internal reference voltage

–40 °C < TA < +105 °C

1.18

1.21

1.24

TS_vrefint(1)

ADC sampling time when reading the

internal reference voltage

-10

µs

VRERINT_s(2)

Internal reference voltage spread over the

temperature range

VDD = 3V ± 10mV

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