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STM32F756VG 数据表(PDF) 149 Page - STMicroelectronics |
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STM32F756VG 数据表(HTML) 149 Page - STMicroelectronics |
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149 / 228 page  DocID027589 Rev 4 149/228 STM32F756xx Electrical characteristics 196 Note: ADC accuracy vs. negative injection current: injecting a negative current on any analog input pins should be avoided as this significantly reduces the accuracy of the conversion being performed on another analog input. It is recommended to add a Schottky diode (pin to ground) to analog pins which may potentially inject negative currents. Any positive injection current within the limits specified for IINJ(PIN) and ΣIINJ(PIN) in Section 5.3.17 does not affect the ADC accuracy. Table 65. ADC static accuracy at fADC = 36 MHz Symbol Parameter Test conditions Typ Max(1) 1. Guaranteed by characterization results. Unit ET Total unadjusted error fADC =36 MHz, VDDA = 2.4 to 3.6 V, VREF = 1.7 to 3.6 V VDDA −VREF < 1.2 V ±4 ±7 LSB EO Offset error ±2 ±3 EG Gain error ±3 ±6 ED Differential linearity error ±2 ±3 EL Integral linearity error ±3 ±6 Table 66. ADC dynamic accuracy at fADC = 18 MHz - limited test conditions(1) Symbol Parameter Test conditions Min Typ Max Unit ENOB Effective number of bits fADC =18 MHz VDDA = VREF+= 1.7 V Input Frequency = 20 KHz Temperature = 25 °C 10.3 10.4 - bits SINAD Signal-to-noise and distortion ratio 64 64.2 - dB SNR Signal-to-noise ratio 64 65 - THD Total harmonic distortion − 67 − 72 - 1. Guaranteed by characterization results. Table 67. ADC dynamic accuracy at fADC = 36 MHz - limited test conditions(1) Symbol Parameter Test conditions Min Typ Max Unit ENOB Effective number of bits fADC =36 MHz VDDA = VREF+ = 3.3 V Input Frequency = 20 KHz Temperature = 25 °C 10.6 10.8 - bits SINAD Signal-to noise and distortion ratio 66 67 - dB SNR Signal-to noise ratio 64 68 - THD Total harmonic distortion − 70 − 72 - 1. Guaranteed by characterization results. |
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