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数据搜索系统，热门电子元器件搜索 |
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数据搜索系统，热门电子元器件搜索 |
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STM32F756VG 数据表(PDF) 150 Page - STMicroelectronics |
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STM32F756VG 数据表(HTML) 150 Page - STMicroelectronics |
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150 / 228 page  Electrical characteristics STM32F756xx 150/228 DocID027589 Rev 4 Figure 41. ADC accuracy characteristics 1. See also Table 64. 2. Example of an actual transfer curve. 3. Ideal transfer curve. 4. End point correlation line. 5. ET = Total Unadjusted Error: maximum deviation between the actual and the ideal transfer curves. EO = Offset Error: deviation between the first actual transition and the first ideal one. EG = Gain Error: deviation between the last ideal transition and the last actual one. ED = Differential Linearity Error: maximum deviation between actual steps and the ideal one. EL = Integral Linearity Error: maximum deviation between any actual transition and the end point correlation line. Figure 42. Typical connection diagram using the ADC 1. Refer to Table 62 for the values of RAIN, RADC and CADC. 2. Cparasitic represents the capacitance of the PCB (dependent on soldering and PCB layout quality) plus the pad capacitance (roughly 5 pF). A high Cparasitic value downgrades conversion accuracy. To remedy this, fADC should be reduced. |
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