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STM32F100RC 数据表(PDF) 56 Page - STMicroelectronics

部件名 STM32F100RC
功能描述  Clock, reset and supply management
PDF  106 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STM32F100RC 数据表(HTML) 56 Page - STMicroelectronics

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Electrical characteristics
STM32F100xC, STM32F100xD, STM32F100xE
56/106
DocID15081 Rev 10
5.3.10
FSMC characteristics
Asynchronous waveforms and timings
Figure 15 through Figure 18 represent asynchronous waveforms and Table 30 through
Table 33 provide the corresponding timings. The results shown in these tables are obtained
with the following FSMC configuration:
AddressSetupTime = 0
AddressHoldTime = 1
DataSetupTime = 1
Table 28. Flash memory characteristics
Symbol
Parameter
Conditions
Min(1)
1. Guaranteed by design, not tested in production.
Typ
Max(1)
Unit
tprog
16-bit programming time
TA = –40 to +105 °C
40
52.5
70
µs
tERASE
Page (2 KB) erase time
TA = –40 to +105 °C
20
-
40
ms
tME
Mass erase time
TA = –40 to +105 °C
20
-
40
ms
IDD
Supply current
Read mode
fHCLK = 24 MHz, VDD = 3.3 V
--
20
mA
Write / Erase modes
fHCLK = 24 MHz, VDD = 3.3 V
--
5
mA
Power-down mode / Halt,
VDD = 3.0 to 3.6 V
-
-
50
µA
Vprog
Programming voltage
-
2
-
3.6
V
Table 29. Flash memory endurance and data retention
Symbol
Parameter
Conditions
Value
Unit
Min(1)
1. Based on characterization not tested in production.
Typ
Max
NEND
Endurance
TA = –40 to +85 °C (6 suffix versions)
TA = –40 to +105 °C (7 suffix versions)
10
-
-
kcycles
tRET
Data retention
1 kcycle(2) at TA = 85 °C
2. Cycling performed over the whole temperature range.
30
-
-
Years
1 kcycle(2) at TA = 105 °C
10
-
-
10 kcycles(2) at TA = 55 °C
20
-
-



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