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MB96F348CWCPMC-GSE2 数据表(PDF) 96 Page - Cypress Semiconductor

部件名 MB96F348CWCPMC-GSE2
功能描述  8-byte instruction execution queue
PDF  109 Pages
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制造商  CYPRESS [Cypress Semiconductor]
网页  http://www.cypress.com
标志 CYPRESS - Cypress Semiconductor

MB96F348CWCPMC-GSE2 数据表(HTML) 96 Page - Cypress Semiconductor

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MB96340 Series
Document Number: 002-04579 Rev. *A
Page 96 of 109
14.8
Flash Memory Program/erase Characteristics
[1]: This value was converted from the results of evaluating the reliability of the technology (using Arrhenius equation to convert high
temperature measurements into normalized value at 85oC)
(TA = -40°C to 105°C, VCC = AVCC = 3.0V to 5.5V, VSS = AVSS = 0V)
Parameter
Value
Unit
Remarks
Min
Typ
Max
Sector erase time
Program/Data Flash (Main Flash)
-
0.9
3.6
s
Without erasure pre-programming time
Sector erase time Data Flash
-
0.5
2
s
Without erasure pre-programming time
-
0.8
3.6
s
Including erasure pre-programming time
Chip erase time Program/Data Flash (Main Flash)
-
n*0.9
n*3.6
s
Without erasure pre-programming time
(n is the number of Flash sector of the
device)
Chip erase time Data Flash
-
2.5
10
s
Without erasure pre-programming time
-
3.7
16.4
s
Including erasure pre-programming time
Word (16-bit width) programming time
Program/Data Flash (Main Flash)
-
23
370
us
Without overhead time for submitting
write command
Byte (8-bit width) programming time Data Flash
-
15
100
us
Without overhead time for submitting
write command
Program/Erase cycle
10000
-
-
cycle
100 000 Program/Erase cycles are under
evaluation by Cypress
Flash data retention time
20
-
-
year
[1]



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